New Designed Procedure for G/SiO<sub>2</sub>/SiC Nano-Heterojunctions Growth on Recycled 3C-SiC Powder
Sarno, M.
Galvagno, S.
Piscitelli, R.
Portofino, S.
Cirillo, C.
Ciambelli, P.
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Sarno M., Galvagno S., Piscitelli R., Portofino S., Cirillo C., Ciambelli P., 2017, New Designed Procedure for G/SiO2/SiC Nano-Heterojunctions Growth on Recycled 3C-SiC Powder, Chemical Engineering Transactions, 57, 1525-1530.
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Few layer graphene/SiO2/SiC (G/SiO2/SiC) core-layers-sheath nano-heterojunctions were obtained by a new easy and cheap designed procedure by thermal annealing at atmospheric pressure and low temperature on 3C-SiC powder derived from exhausted activated carbon. Recycled SiC was chosen as growth substrate to realize a convenient process and to increase the added value of the recycled, combining the favourable properties of different substances. SiC powder and the advanced materials obtained were carefully characterized by the combining use of different techniques: transmission electron microscopy (TEM) with EDAX probe, scanning electron microscopy (SEM), X-ray diffraction analysis, Raman spectroscopy, thermogravimetric analysis coupled with quadrupole mass detector (TG-DTG-MASS).
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